Elixir M2F2G64CB8HA4N-CG Datasheet Page 17

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M2F1G64CB88A4N / M2F2G64CB8HA4N
1GB: 128M x 64 / 2GB: 256M x 64
Unbuffered DDR3 SDRAM DIMM Preliminary
REV 0.1 17
06/2008
© NANYA TECHNOLOGY CORP.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
AC Timing Specifications for DDR3 SDRAM Devices Used on Module
DDR3-1600
Parameter
Symbol
Min
Max
Units
Clock Timing
Minimum Clock Cycle time (DLL off mode)
tCK(DLL_OFF)
8
-
ns
Average high pulse width
tCH(avg)
0.47
0.53
tCK(avg)
Average low pulse width
tCL(avg)
0.47
0.53
tCK(avg)
Absolute Clock Period
tCK(abs)
tCK(avg)min + tJIT(per)min
tCK(avg)max +tJIT(per)max
ps
Absolute clock high pulse width
tCH(abs)
0.43
-
ps
Absolute clock low pulse width
tCL(abs)
0.43
-
ps
Clock Period Jitter
tJIT(per)
-70
70
ps
Clock Period Jitter during DLL locking period
tJIT(per,lck)
-60
60
ps
Cycle to Cycle Period Jitter
tJIT(cc)
140
ps
Cycle to Cycle Period Jitter during DLL locking period
tJIT(cc,lck)
120
ps
Duty Cycle Jitter
tJIT(duty)
-
-
ps
Cumulative error across 2 cycles
tERR(2per)
-103
103
ps
Cumulative error across 3 cycles
tERR(3per)
-122
122
ps
Cumulative error across 4 cycles
tERR(4per)
-136
136
ps
Cumulative error across 5 cycles
tERR(5per)
-147
147
ps
Cumulative error across 6 cycles
tERR(6per)
-155
155
ps
Cumulative error across 7 cycles
tERR(7per)
-163
163
ps
Cumulative error across 8 cycles
tERR(8per)
-169
169
ps
Cumulative error across 9 cycles
tERR(9per)
-175
175
ps
Cumulative error across 10 cycles
tERR(10per)
-180
180
ps
Cumulative error across n=11~50 cycles
tERR(nper)
tERR(npr)min =(1+
0.68In(n))*tJIT(per)min
tERR(npr)max =(1+
0.68In(n))*tJIT(per)max
ps
Data Timing
DQS,  to DQ skew, per group, per access
tDQSQ
-
100
ps
DQ output hold time from DQS, 
tQH
0.38
-
tCK(avg)
DQ low-impedance time from CK, 
tLZ(DQ)
-450
225
ps
DQ high-impedance time from CK, 
tHZ(DQ)
-
225
ps
Data setup time to DQS, DQS reference to Vih(ac) / Vil(ac) levels
tDS(base)
TBD
ps
Data hold time to DQS, DQS reference to Vih(ac) / Vil(ac) levels
tDH(base)
TBD
ps
Data Strobe Timing
DQS,  differential READ Preamble
tRPRE
0.9
-
tCK(avg)
DQS,  differential READ Postamble
tRPST
0.3
-
tCK(avg)
DQS,  differential output high time
tQSH
0.40
-
tCK(avg)
DQS,  differential output low time
tQSL
0.40
-
tCK(avg)
DQS,  differential WRITE Preamble
tWPRE
0.9
-
tCK(avg)
DQS,  differential WRITE Postamble
tWPST
0.3
-
tCK(avg)
DQS,  rising dege output access time from rising CK, 
tDQSCK
-225
225
ps
DQS,  low-impedance time (Reference from RL-1)
tLZ(DQS)
-450
225
ps
DQS,  high-impedance time (Reference from RL + BL/2)
tHZ(DQS)
-
225
ps
DQS,  differential input low pulse width
tDQSL
0.4
0.6
tCK(avg)
DQS,  differential input high pulse width
tDQSH
0.4
0.6
tCK(avg)
DQS,  rising edge to CK,  rising edge
tDQSS
-0.25
0.25
tCK(avg)
DQS,  falling edge setup time to CK,  rising edge
tDSS
0.2
-
tCK(avg)
DQS,  falling edge hold time to CK,  rising edge
tDSH
0.2
-
tCK(avg)
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