Elixir M2X4G64CB8HG9N-DG Datasheet download pdf

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N

2GB: 256M x 64 / 4GB: 512M x 64

PC3-12800

Unbuffered DDR3 SDRAM DIMM

REV 1.1 1

10/2011

NANYA reserves the right to change products and specifications without notice.

Based on DDR3-1600 256Mx8 SDRAM G-Die

Features

•Performance:

Speed Sort

PC3-12800

Unit

-DG

DIMM CAS Latency

fck – Clock Freqency

800

MHz

tck – Clock Cycle

1.25

fDQ – DQ Burst Freqency

1600

Mbps

• 240-Pin Dual In-Line Memory Module (UDIMM)

• 256Mx64 (2GB) / 512Mx64 (4GB) DDR3 Unbuffered DIMM based

on 256Mx8 DDR3 SDRAM G-Die devices.

• Intended for 800MHz applications

• Inputs and outputs are SSTL-15 compatible

• V

= V

DDQ

= 1.5V ±0.075V

• SDRAMs have 8 internal banks for concurrent operation

• Differential clock inputs

• Data is read or written on both clock edges

• DRAM DLL aligns DQ and DQS transitions with clock transitions.

• Address and control signals are fully synchronous to positive

clock edge

• Nominal and Dynamtic On-Die Termination support

• XMP( Extreme Memory Profiles) support

• Programmable Operation:

- DIMM  Latency: 5, 6, 7, 8, 9, 10, 11.

- Burst Type: Sequential or Interleave

- Burst Length: BC4, BL8

- Operation: Burst Read and Write

• Two different termination values (Rtt_Nom & Rtt_WR)

• 15/10/1 (row/column/rank) Addressing for 2GB

• 15/10/2 (row/column/rank) Addressing for 4GB

• Extended operating temperature rage

• Auto Self-Refresh option

• Serial Presence Detect

• Gold contacts

• SDRAMs are in 78-ball BGA Package

• RoHS compliance and Halogen free product

Description

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Unbuffered Dual In-Line

Memory Module (UDIMM), organized as one rank of 256Mx64 (2GB) and two ranks of 512Mx64 (4GB) high-speed memory array. Modules

use eight 256Mx8 (2GB) 78-ball BGA packaged devices and sixteen 256Mx8 (4GB) 78-ball BGA packaged devices. These DIMMs are

manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes

electrical variation between suppliers. All Elixir DDR3 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long

space-saving footprint.

The DIMM is intended for use in applications operating of 800MHz clock speeds and achieves high-speed data transfer rates of 12800Mbps.

Prior to any access operation, the device  latency and burst/length/operation type must be programmed into the DIMM by address

inputs A0-A13 (2GB) / A0-A14 (4GB) and I/O inputs BA0~BA2 using the mode register set cycle.

The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data

are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.

1 2 3 4 5 6 ... 16 17

Summary of Contents

Page 1 - PC3-12800

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 1 10/2011 © NANYA TEC

Page 2

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 10 10/2011 © NANYA TE

Page 3 - DDR3 SDRAM Pin Assignment

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 11 10/2011 © NANYA TE

Page 4

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 12 10/2011 © NANYA TE

Page 5

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 13 10/2011 © NANYA TE

Page 6 - REV 1.1 6

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 14 10/2011 © NANYA TE

Page 7

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 15 10/2011 © NANYA TE

Page 8

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 16 10/2011 © NANYA TE

Page 9

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 17 10/2011 © NANYA TE

Page 10 - REV 1.1 10

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 2 10/2011 © NANYA TEC

Page 11 - REV 1.1 11

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 3 10/2011 © NANYA TEC

Page 12 - REV 1.1 12

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 4 10/2011 © NANYA TEC

Page 13

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 5 10/2011 © NANYA TEC

Page 14

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 6 10/2011 © NANYA TEC

Page 15

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 7 10/2011 © NANYA TEC

Page 16

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 8 10/2011 © NANYA TEC

Page 17 - Revision Log

M2X2G64CB88G7(H)N / M2X4G64CB8HG5(9)N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-12800 Unbuffered DDR3 SDRAM DIMM REV 1.1 9 10/2011 © NANYA TEC

Comments to this Manuals

No comments

Elixir M2X4G64CB8HG9N-DG Datasheet

Browse online or download Datasheet for Memory modules Elixir M2X4G64CB8HG9N-DG. Elixir 4GB DDR3 User Manual

Summary of Contents

Comments to this Manuals

Related products and manuals for Memory modules Elixir M2X4G64CB8HG9N-DG