Elixir M2F4G64CB8HB5N-CG Datasheet Page 22

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M2F1G64CBH4B5(9)P / M2F2G64CB88B7(H)N / M2F4G64CB8HB5(9)N
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SDRAM DIMM
REV 1.1 22
10/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1600MHz)
Parameter
Symbol
DDR3-1600
Units
Notes
Min.
Max.
Clock Timing
Minimum Clock Cycle Time (DLL off mode)
tCK (DLL_OFF)
8
-
ns
Average Clock Period
tCK(avg)
Refer to "Standard Speed Bins)
ps
Average high pulse width
tCH(avg)
0.47
0.53
tCK(avg)
Average low pulse width
tCL(avg)
0.47
0.53
tCK(avg)
Absolute Clock Period
tCK(abs)
Min.: tCK(avg)min + tJIT(per)min
Max.: tCK(avg)max + tJIT(per)max
ps
Absolute clock HIGH pulse width
tCH(abs)
0.43
-
tCK(avg)
Absolute clock LOW pulse width
tCL(abs)
0.43
-
tCK(avg)
Clock Period Jitter
JIT(per)
-70
70
ps
Clock Period Jitter during DLL locking period
JIT(per, lck)
-60
60
ps
Cycle to Cycle Period Jitter
tJIT(cc)
140
140
ps
Cycle to Cycle Period Jitter during DLL locking period
JIT(cc, lck)
120
120
ps
Duty Cycle Jitter
tJIT(duty)
-
-
ps
Cumulative error across 2 cycles
tERR(2per)
-103
103
ps
Cumulative error across 3 cycles
tERR(3per)
-122
122
ps
Cumulative error across 4 cycles
tERR(4per)
-136
136
ps
Cumulative error across 5 cycles
tERR(5per)
-147
147
ps
Cumulative error across 6 cycles
tERR(6per)
-155
155
ps
Cumulative error across 7 cycles
tERR(7per)
-163
163
ps
Cumulative error across 8 cycles
tERR(8per)
-169
169
ps
Cumulative error across 9 cycles
tERR(9per)
-175
175
ps
Cumulative error across 10 cycles
tERR(10per)
-180
180
ps
Cumulative error across 11 cycles
tERR(11per)
-184
184
ps
Cumulative error across 12 cycles
tERR(12per)
-188
188
ps
Cumulative error across n = 13, 14 . . . 49, 50 cycles
tERR(nper)
tERR(nper)min = (1 + 0.68ln(n)) * tJIT(per)min
tERR(nper)max = (1 + 0.68ln(n)) * tJIT(per)max
ps
Data Timing
DQS, DQS# to DQ skew, per group, per access
tDQSQ
-
100
ps
DQ output hold time from DQS, DQS#
tQH
0.38
-
tCK(avg)
DQ low-impedance time from CK, CK#
tLZ(DQ)
-450
225
ps
DQ high impedance time from CK, CK#
tHZ(DQ)
-
225
ps
Data setup time to DQS, DQS# referenced to Vih(ac) / Vil(ac) levels
tDS(base)
AC175
-
ps
Data setup time to DQS, DQS# referenced to Vih(ac) / Vil(ac) levels
tDS(base)
AC150
10
ps
Data hold time from DQS, DQS# referenced to Vih(dc) / Vil(dc) levels
tDH(base)
DC100
45
ps
DQ and DM Input pulse width for each input
tDIPW
360
-
ps
Data Strobe Timing
DQS,DQS# differential READ Preamble
tRPRE
0.9
Note 19
tCK(avg)
DQS, DQS# differential READ Postamble
tRPST
0.3
Note 11
tCK(avg)
DQS, DQS# differential output high time
tQSH
0.4
-
tCK(avg)
DQS, DQS# differential output low time
tQSL
0.4
-
tCK(avg)
DQS, DQS# differential WRITE Preamble
tWPRE
0.9
-
tCK(avg)
DQS, DQS# differential WRITE Postamble
tWPST
0.3
-
tCK(avg)
DQS, DQS# rising edge output access time from rising CK, CK#
tDQSCK
-255
255
tCK(avg)
DQS and DQS# low-impedance time
(Referenced from RL - 1)
tLZ(DQS)
-450
225
tCK(avg)
DQS and DQS# high-impedance time
(Referenced from RL + BL/2)
tHZ(DQS)
-
225
tCK(avg)
DQS, DQS# differential input low pulse width
tDQSL
0.45
0.55
tCK(avg)
DQS, DQS# differential input high pulse width
tDQSH
0.45
0.55
tCK(avg)
DQS, DQS# rising edge to CK, CK# rising edge
tDQSS
-0.27
0.27
tCK(avg)
DQS, DQS# falling edge setup time to CK, CK# rising edge
tDSS
0.18
-
tCK(avg)
DQS, DQS# falling edge hold time from CK, CK# rising edge
tDSH
0.18
-
tCK(avg)
Command and Address Timing
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